050-7438 rev a 4-2003 t-max tm g c e apt65gp60b2 600v the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency switchmode power supplies. low conduction loss 100 khz operation @ 400v, 54a low gate charge 50 khz operation @ 400v, 76a ultrafast tail current shutoff ssoa rated maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 600 3 4.5 6 2.2 2.7 2.1 10005000 100 characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 1000a) gate threshold voltage (v ce = v ge , i c = 2.5ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 65a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 65a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts ana symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l apt65gp60b2 600 2030 100 96 250 250a@600v 833 -55 to 150 300 unit volts ampswatts c parametercollector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current 7 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt g c e downloaded from: http:///
050-7438 rev a 4-2003 apt65gp60b2 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 65a t j = 150c, r g = 5 , v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 65a r g = 5 t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 65a r g = 5 t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 7400 580 35 7.5 210 5065 250 3054 91 65 605 1408 896 3054 128 91 605 19251470 unit pf v nc a ns j ns j unitc/w gm min typ max .15 n/a 6.10 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jeds24-1. (see figures 21, 23.) 7 continuous current limited by package lead temperature. apt reserves the right to change, without notice, the specifications and information contained herein. downloaded from: http:///
050-7438 rev a 4-2003 apt65gp60b2 typical performance curves v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce =480v v ce =300v v ce =120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 65a t j = 25c t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c = 32.5a i c = 65a i c =130a i c =130a i c = 65a 100 9080 70 60 50 40 30 20 10 0 250200 150 100 50 04 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.151.10 1.05 1.0 0.95 0.9 0.85 0.8 100 9080 70 60 50 40 30 20 10 0 1614 12 10 86 4 2 0 3 2.5 2 1.5 1 0.5 0 300250 200 150 100 50 0 i c = 32.5a downloaded from: http:///
050-7438 rev a 4-2003 apt65gp60b2 typical performance curves t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 400v r g = 5 l = 100 h v ge = 15v,t j =125c v ge = 15v v ge = 10v v ge =10v,t j =125c v ge = 10v,t j =25c v ge = 15v,t j =25c t j = 25c, v ge = 10v or 15v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature r g = 5 , l = 100 h, v ce = 400v r g = 5 , l = 100 h, v ce = 400v v ce = 400v l = 100 hr g = 5 t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v v ce = 400v v ge = +15v r g = 5 switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) v ce = 400v v ge = +15v t j = 125c v ce = 400v l = 100 hr g = 5 t j =125c, v ge =15v t j = 125c, v ge = 10v or 15v t j =125c,v ge =10v t j = 25c, v ge =10v t j = 25c, v ge =15v 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 0 10 20 30 40 50 -50 -25 0 25 50 75 100 125 6050 40 30 20 10 0 160140 120 100 8060 40 20 0 60005500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 90008000 7000 6000 5000 4000 3000 2000 1000 0 160140 120 100 8060 40 20 0 140120 100 8060 40 20 0 50004000 3000 2000 1000 0 60005000 4000 3000 2000 1000 0 e off 130a e on2 130a e on2 32.5a e off 65a e on2 65a e off 32.5a e on2 32.5a e off 65a e on2 65a e on2 130a e off 130a e off 32.5a v ce = 400v t j = 25c or 125c r g = 5 l = 100 h downloaded from: http:///
050-7438 rev a 4-2003 apt65gp60b2 typical performance curves 10 30 50 70 90 110 130 187100 5010 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10,000 5,0001,000 500100 5010 300250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) f max , operating frequency (khz) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 5 c ies c oes max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fm i n ( f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = c res figure 19b, transient thermal impedance model 0.06830860.0822491 0.02166640.2556989 power (watts) junction temp. ( c) case temperature rc model downloaded from: http:///
050-7438 rev a 4-2003 apt65gp60b2 typical performance curves figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit t-max ? (b2) package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector emitter gate collector(cathode) collector current gate voltage collector voltage t r 10% 90% 5% t d(on) t j = 125 c 5 % switching energy collector voltage collector current t gate voltage t f 10% 90% t d(off) 90% 0 t j = 125 c switching energy apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. i c a d.u.t. apt30df60 v ce figure 21, inductive switching test circuit v cc downloaded from: http:///
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